Data related to the nanoscale structural and compositional evolution in resistance change memories


Journal article


T. Ahmed, S. Walia, E. L. Mayes, R. Ramanathan, P. Guagliardo, V. Bansal, M. Bhaskaran, J. J. Yang, S. Sriram
Data in Brief, vol. 21, 2018, pp. 18-24


Cite

Cite

APA   Click to copy
Ahmed, T., Walia, S., Mayes, E. L., Ramanathan, R., Guagliardo, P., Bansal, V., … Sriram, S. (2018). Data related to the nanoscale structural and compositional evolution in resistance change memories. Data in Brief, 21, 18–24. https://doi.org/10.1016/j.dib.2018.09.087


Chicago/Turabian   Click to copy
Ahmed, T., S. Walia, E. L. Mayes, R. Ramanathan, P. Guagliardo, V. Bansal, M. Bhaskaran, J. J. Yang, and S. Sriram. “Data Related to the Nanoscale Structural and Compositional Evolution in Resistance Change Memories.” Data in Brief 21 (2018): 18–24.


MLA   Click to copy
Ahmed, T., et al. “Data Related to the Nanoscale Structural and Compositional Evolution in Resistance Change Memories.” Data in Brief, vol. 21, 2018, pp. 18–24, doi:10.1016/j.dib.2018.09.087.


BibTeX   Click to copy

@article{t2018a,
  title = {Data related to the nanoscale structural and compositional evolution in resistance change memories},
  year = {2018},
  journal = {Data in Brief},
  pages = {18-24},
  volume = {21},
  doi = {10.1016/j.dib.2018.09.087},
  author = {Ahmed, T. and Walia, S. and Mayes, E. L. and Ramanathan, R. and Guagliardo, P. and Bansal, V. and Bhaskaran, M. and Yang, J. J. and Sriram, S.}
}