Journal article
Nanotechnology, vol. 27(50), 2016, p. 505210
APA
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Nili, H., Ahmed, T., Walia, S., Ramanathan, R., Kandjani, A. E., Rubanov, S., … Bhaskaran, M. (2016). Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO3−x memristors. Nanotechnology, 27(50), 505210. https://doi.org/10.1088/0957-4484/27/50/505210
Chicago/Turabian
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Nili, H., T. Ahmed, S. Walia, R. Ramanathan, A. E. Kandjani, S. Rubanov, J. Kim, O. Kavehei, V. Bansal, and M. Bhaskaran. “Microstructure and Dynamics of Vacancy-Induced Nanofilamentary Switching Network in Donor Doped SrTiO3−x Memristors.” Nanotechnology 27, no. 50 (2016): 505210.
MLA
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Nili, H., et al. “Microstructure and Dynamics of Vacancy-Induced Nanofilamentary Switching Network in Donor Doped SrTiO3−x Memristors.” Nanotechnology, vol. 27, no. 50, 2016, p. 505210, doi:10.1088/0957-4484/27/50/505210.
BibTeX Click to copy
@article{h2016a,
title = {Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO3−x memristors},
year = {2016},
issue = {50},
journal = {Nanotechnology},
pages = {505210},
volume = {27},
doi = {10.1088/0957-4484/27/50/505210},
author = {Nili, H. and Ahmed, T. and Walia, S. and Ramanathan, R. and Kandjani, A. E. and Rubanov, S. and Kim, J. and Kavehei, O. and Bansal, V. and Bhaskaran, M.}
}