Defect-Free, Few-Atomic-Layer Thin ZnO Nanosheets with Superior Excitonic Properties for Optoelectronic Devices


Journal article


M. Singh, M. Zakria, A. S. Pannu, P. Sonar, C. Smith, S. Mahasivam, R. Ramanathan, K. Tran, S. Tawfik, B. J. Murdoch, E. L. H. Mayes, M. J. S. Spencer, M. R. Phillips, V. Bansal, C. Ton-That*
ACS Nano, vol. 18(26), 2024, pp. 16947–16957


Cite

Cite

APA   Click to copy
Singh, M., Zakria, M., Pannu, A. S., Sonar, P., Smith, C., Mahasivam, S., … Ton-That*, C. (2024). Defect-Free, Few-Atomic-Layer Thin ZnO Nanosheets with Superior Excitonic Properties for Optoelectronic Devices. ACS Nano, 18(26), 16947–16957. https://doi.org/10.1021/acsnano.4c03098


Chicago/Turabian   Click to copy
Singh, M., M. Zakria, A. S. Pannu, P. Sonar, C. Smith, S. Mahasivam, R. Ramanathan, et al. “Defect-Free, Few-Atomic-Layer Thin ZnO Nanosheets with Superior Excitonic Properties for Optoelectronic Devices.” ACS Nano 18, no. 26 (2024): 16947–16957.


MLA   Click to copy
Singh, M., et al. “Defect-Free, Few-Atomic-Layer Thin ZnO Nanosheets with Superior Excitonic Properties for Optoelectronic Devices.” ACS Nano, vol. 18, no. 26, 2024, pp. 16947–57, doi:10.1021/acsnano.4c03098.


BibTeX   Click to copy

@article{m2024a,
  title = {Defect-Free, Few-Atomic-Layer Thin ZnO Nanosheets with Superior Excitonic Properties for Optoelectronic Devices},
  year = {2024},
  issue = {26},
  journal = {ACS Nano},
  pages = {16947–16957},
  volume = {18},
  doi = {10.1021/acsnano.4c03098},
  author = {Singh, M. and Zakria, M. and Pannu, A. S. and Sonar, P. and Smith, C. and Mahasivam, S. and Ramanathan, R. and Tran, K. and Tawfik, S. and Murdoch, B. J. and Mayes, E. L. H. and Spencer, M. J. S. and Phillips, M. R. and Bansal, V. and Ton-That*, C.}
}